Crystal Radio Supply

BAT46
SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Repetitive Peak Forward Current* Surge non Repetitive Forward Current* Power Dissipation* Storage and Junction Temperature Range Maximum Temperature for Soldering during 10s at 4mm from Case Ta = 25°C tp 1s 0.5 tp = 10ms TI = 80°C


Value 100 150 350 750 150 - 65 to + 150 - 65 to + 125 230

Unit V mA mA mA mW °C °C

THERMAL RESISTANCE
Symbol Rth(j-a) Junction-ambient*
* On infinite heatsink with 4mm lead length.

Test Conditions

Value 300

Unit °C/W

October 2001 - Ed: 2B

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BAT46
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR VF * Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR * Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 75V VR = 50V Test Conditions Min. Typ. Max. Unit V 0.25 0.45 1 0.5 5 µA V

IR = 100µA IF = 0.1mA IF = 10mA IF = 250mA VR = 1.5V VR = 10V

100

0.8 7.5 2 15 5 20

DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0V VR = 1V Min. Typ. 10 6 Max. Unit pF

f = 1Mhz

* Pulse test: tp 300µs < 2%.

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BAT46
Fig. 1-1: Forward voltage drop versus forward current (low level, typical values) Fig. 1-2: Forward voltage drop versus forward current (high level, typical values)

IFM(mA) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.1

IFM(A) 5E-1

Tj=125°C Tj=25°C

Tj=125°C

1E-1

Tj=25°C

VFM(V) 0.2 0.3 0.4 0.5 0.6

VFM(V) 1E-2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2